Failure Site Localization
Failure site localization focuses on identifying fault points or thermal hotspots in abnormal chips under specific electrical failure conditions. By correlating these locations with the original chip design, it is possible to trace and determine the potential failure mechanisms and initiation paths.For internal chip failure localization, comprehensive information is essential—such as chip layout, fabrication process, structure, and materials. Failure localization aims to identify the physical location of the defect with minimal or no destruction to the sample.
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Failure site localization can be categorized into two main types: Hotspot localization、oltage contrast (VC) localization;
Hotspot localization techniques include:
InGaAs Microscopy (Indium Gallium Arsenide Micro-Optical Analysis)、OBIRCH (Optical Beam Induced Resistance Change)、 Thermal EMMI (Thermal Emission Microscopy using Indium Antimonide, InSb sensor)
Voltage contrast localization techniques include:
Active methods: EBAC (Electron Beam Absorbed Current)、 Conductive Atomic Force Microscopy (C-AFM)
Passive method: Passive Voltage Contrast (PVC)
